ACTA

Fano Resonance of Eu²⁺ and Eu³⁺ in (Eu,Gd)Te MBE Layers

B.A. Orlowski^a, B.J. Kowalski^a, P. Dziawa^a, M. Pietrzyk^a, S. Mickievicius^b, V. Osinniy^a, B. Taliashvili^a, I.A. Kowalik^a, T. Story^a and R.L. Johnson^c
^aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
^bSemiconductor Physics Institute, A. Gostauto 11, 2600 Vilnius, Lithuania
^cInstitut für Experimentalphysik, Universität Hamburg, Luruper Chaussee 149, 22761 Hamburg, Germany

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Received: 4 06 2005;

Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu²⁺ and Eu³⁺ ions to the valence band. The resonant and antiresonant photon energies of Eu²⁺ ions were found as equal to 141 V and 132 eV, respectively and for Eu³⁺ ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu²⁺4f electrons was found at the valence band edge while for Eu³⁺ it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.

DOI: 10.12693/APhysPolA.108.803
PACS numbers: 79.60.-i, 71.20.Mq