Defects in Dilute Nitrides

W.M. Chena, I.A. Buyanovaa, C.W. Tub and H. Yonezuc aDepartment of Physics and Measurement Technology, Linköping University, 58183 Linköping, Sweden bDepartment of Electrical and Computer Engineering, University of California, La Jolla, CA, 92093-0407, USA cDepartment of Electrical and Electronic Engineering, Toyohashi University of Technology, Toyohashi, Aichi, 441-8580, Japan

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Received: 4 06 2005;

We provide a brief review of our recent results from optically detected magnetic resonance studies of grown-in non-radiative defects in dilute nitrides, i.e. Ga(In)NAs and Ga(Al,In)NP. Defect complexes involving intrinsic defects such as Asa antisites and Gai self-interstitials were positively identified. Effects of growth conditions, chemical compositions and post-growth treatments on formation of the defects are closely examined. These grown-in defects are shown to play an important role in non-radiative carrier recombination and thus in degrading optical quality of the alloys, harmful to performance of potential optoelectronic and photonic devices based on these dilute nitrides.

DOI: 10.12693/APhysPolA.108.571 PACS numbers:61.72.Ji, 71.55.Eq, 76.70.Hb