Photoluminescence Study of Bulk GaN Doped with Beryllium
M. Jaworeka, A. Wysmołeka, M. Kamińskaa, A. Twardowskia, M. Boćkowskib and I. Grzegoryb
aInstitute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
bInstitute of High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland
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Received: 4 06 2005;
Photoluminescence of bulk GaN:Be grown by high pressure method is presented. The investigated crystals show well-resolved photoluminescence due to free and bound excitons similar to that observed for homoeptitaxial GaN layers. In addition to the excitonic transitions, pronounced luminescence band at 3.38 eV, due to Be acceptor, is observed. It was found that temperature behavior of this emission is typical of donor- and conduction band-acceptor transitions. The optical activation energy of Be acceptor is obtained to be of 60±15 meV.
DOI: 10.12693/APhysPolA.108.705
PACS numbers:78.55.Cr, 71.55.-i, 71.35.-y