Light Emission Properties of GaN-Based Laser Diode Structures

M. Godlewski a,b, M.R. Phillipsc, R. Czerneckid, G. Targowskid, P. Perlind, M. Leszczyńskid, S. Figgee and D. Hommele aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland, bDept. of Mathematics and Natural Sciences College of Science, Cardinal S. Wyszyński University, Warsaw, Poland cMicrostructural Analysis Unit, UTS, Sydney, Australia d Institute of High Pressure Physics (Unipress), Polish Academy of Sciences, Warsaw, Poland eInstitute of Solid State Physics, University of Bremen, 28334 Bremen, Germany

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Received: 4 06 2005;

Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.

DOI: 10.12693/APhysPolA.108.675 PACS numbers:85.30.-z, 78.60.Hk, 68.37.Hk