A Real-Time S-Parameter Imaging System
P.S. Naik, C.K. Cheung, C.D. Beling and S. Fung
Department of Physics, University of Hong Kong, Pokfulam Road, Hong Kong
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Received: 20 09 2004;
Obtaining a lateral S-parameter image scan from positrons implanted into semiconductor devices can be a helpful research tool both for localizing device structures and in diagnozing defect patterns that could help interpret function. S-parameter images can be obtained by electromagnetically rastering a variable energy positron beam of small spot size across the sample. Here we describe a general hardware and software architecture of relatively low cost that has recently been developed in our laboratory which allows the whole sub-surface S-parameter image of a sample or device to be obtained in real time. This system has the advantage over more conventional sequential scanning techniques of allowing the operator to terminate data collection once the quality of the image is deemed sufficient. As an example of the usefulness of this type of imaging architecture, S-parameter images of a representative sample are presented at two different positron implantation energies.
DOI: 10.12693/APhysPolA.107.761
PACS numbers:42.30.Va, 78.70.Bj