Vertical Electron Transport in GaN/AlGaN Heterostructures

A. Reklaitis Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

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Received: 22 08 2004;

Nonequilibrium dc and large-signal ac vertical electron transport in GaN/AlGaN heterostructures is investigated by Monte Carlo simulations. The symmetric two-barrier GaN/AlGaN heterostructures are studied. The results of simulations show that polarization charges have a profound effect on dc and large-signal ac characteristics of vertical electron transport in GaN/AlGaN heterostructures. Under certain composition, geometry and doping profile, the GaN/AlGaN heterostructures may become bipolar, i.e., the inversion layers may originate at heterointerfaces due to strong built-in electric fields, which are induced by polarization charges.

DOI: 10.12693/APhysPolA.107.261 PACS numbers:73.40.Kp, 72.20.-i, 72.30.+q