ACTA

Experimental Study of Optical Transitions in Be-Doped GaAs/AlAs Multiple Quantum Wells

J. Kundrotas^a,e, A. Čerškus^a, S. Ašmontas^a, G. Valušis^a,e, B. Sherliker^b, M.-P. Halsall^b, P. Harrison^cand M.-J. Steer^d
^aSemiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
^bDepartment of Physics, UMIST, University of Manchester, Manchester M60 1QD, United Kingdom
^cIMP, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
^dDepartment of Electronic and Electrical Engineering, University of Sheffield, Sheffield S1 3JJD, United Kingdom
^eVilnius Gediminas Technical University, Saulėtekio al. 11, 10223 Vilnius, Lithuania

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Received: 22 08 2004;

We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.

DOI: 10.12693/APhysPolA.107.245
PACS numbers:71.35.-y, 78.55.-m