Optically Detected Microwave Resonance and Carrier Dynamics in InAs/GaAs Quantum Dots
N. Žurauskienėa, S. Marcinkevičiusb, G. Janssenc, E. Goovaertsc, R. Nötzeld, P.M. Koenraadd and J.H. Wolterd
aSemiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania
bDepartment of Microelectronics and Information Technology, Royal Institute of Technology, Electrum 229, 164 40 Kista, Sweden
cDepartment of Physics, University of Antwerp, Campus Drie Eiken Universiteitsplein 1, 2610 Antwerpen, Belgium
dDepartment of Physics, Eindhoven University of Technology, 5600 MB Eindhoven, The Netherlands
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Received: 22 08 2004;
The properties of small-sized high density InAs/GaAs quantum dots (emitting at 1.25 eV) are studied by means of optically detected microwave resonance spectroscopy and time resolved photoluminescence techniques. The results are discussed in terms of trapping and thermal escape of the carriers as well as their relaxation and recombination in quantum dots. The data are compared with those recently obtained on shallowly formed InAs quantum dot structures.
DOI: 10.12693/APhysPolA.107.435
PACS numbers:78.67.Hc, 78.47.+p, 76.70.Hb