Monte Carlo Calculation of High Frequency Mobility and Diffusion Noise in Nitride-Based Semiconductors

E. Starikova,b, P. Shiktorova, V. Gružinskisa, L. Varanib, J.C. Vaissièreb, C. Palermob and L. Reggianic aSemiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania bCEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier,, (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France cINFM - National Nanotechnology Laboratory, Dipartimento di Ingegneria, dell'Innovazione, Università di Lecce, via Arnesano s/n, 73100 Lecce, Italy

Full Text PDF

Received: 22 08 2004;

Monte Carlo simulations of high-field transport in semiconductor nitrides, GaN and InN, is used to calculate the velocity-field characteristics and the high-frequency behavior of the differential mobility, spectral density of velocity fluctuations, and noise temperature. It is found that due to very short relaxation time scales of nitrides, the characteristic frequencies associated with extrema and cutoff decay of the negative differential mobility, etc. are shifted to higher frequency range with respect to the case of standard A3B5 compounds. This property is favorable for applications of nitrides in the THz frequency range.

DOI: 10.12693/APhysPolA.107.408 PACS numbers:72.20.Ht, 72.30.+q, 72.70.+m