Theoretical Investigation of Large-Signal Noise in Nanometric Schottky-Barrier Diodes Operating in External Resonant Circuits

P. Shiktorova, E. Starikova,b, V. Gružinskisa, L. Varanib, J.C. Vaissièreb, L. Reggianic, S. Pérez;d and T. Gonzálezd aSemiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania bCEM2 - Centre d'Electronique et de Micro-optoelectronique de Montpellier (CNRS UMR 5507) Université Montpellier II, 34095 Montpellier Cedex 5, France cINFM - National Nanotechnology Laboratory, Dipartimento di Ingegneria, dell' Innovazione, Università di Lecce, Via Arnesano s/n, 73100 Lecce, Italy dDepartamento de Física Aplicada, Universidad de Salamanca, Plaza de la Merced s/n, 37008 Salamanca, Spain

Full Text PDF

Received: 22 08 2004;

We report Monte Carlo simulations of electronic noise in heavily doped nanometric GaAs Schottky-barrier diodes operating in series with a parallel resonant circuit when a high-frequency large-signal voltage is applied to the whole system. Significant modifications of the noise spectrum with respect to the unloaded diode are found to occur in the THz-region.

DOI: 10.12693/APhysPolA.107.396 PACS numbers:72.20.Ht, 72.30.+q, 72.70.+m