Photoelectrical Properties of 1.3 μm Emitting InAs Quantum Dots in InGaAs Matrix

A. Persano a,b, A. Colaa, L. Vasanellib, A. Convertino c, G. Leo c, L. Cerri c, M.C. Frassanitod and S. Viticoli c aCNR-IMM sez. di Lecce, via Arnesano, 73100 Lecce, Italy bDipartimento di Ingegneria dell'Innovazione, Universitá degli Studi di Lecce, Italy cCNR-ISMN, sez. di Roma, via Salaria Km 29,300, 00016 Monterotondo St., Roma, Italy dNational Nanotechnology Laboratory-INFM, via Arnesano, 73100 Lecce, Italy

Full Text PDF

Received: 22 08 2004;

We present a study of photoelectrical properties of the Stranski-Krastanow InAs quantum dots embedded in an InGaAs matrix with low In content, emitting at about 1.3μm. The ground-state electron-hole transition of the dots was investigated as a function of the temperature in presence of electric fields parallel and perpendicular to the plane of the dots by photocurrent spectroscopy. Microphotoluminescence measurements were also carried out, allowing us to evidence carrier capture from the GaAs matrix into the dots.

DOI: 10.12693/APhysPolA.107.381 PACS numbers:78.67.Hc, 73.63.Kv, 81.07.Ta