Ultrafast Bimolecular Recombination in Nanocrystalline Hydrogenated Silicon

N. Nekrašas a, G. Sliaužys a, G. Juška a, K. Arlauskas a, J. Stuchlik b and J. Kočka b aDepartment of Solid State Electronics, Vilnius University, Saulėtekio 9, III k., 01513 Vilnius, Lithuania bInstitute of Physics, Academy of Science, Cukrovarnicka 10, 162 53 Prague, Czech Republic

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Received: 22 08 2004;

In the multilayers of hydrogenated nanocrystalline and amorphous silicon bimolecular recombination coefficient can be reduced in half, while in low-temperature hydrogenated nanocrystalline silicon samples it can be reduced by one order of magnitude. The similarity of the activation energies of both the bimolecular recombination (B) and the Langevin-type recombination (BL) coefficients point to decisive role of tunneling in processes of meeting of electrons and holes, although the ratio B/BL<0.01.

DOI: 10.12693/APhysPolA.107.373 PACS numbers:73.50.Gr, 72.20.Jv, 84.60.Jt