ACTA

Microplasma Noise Stimulated by Microwave Electric Field

A. Namajūnas^a, A. Tamaševičius^a, G. Mykolaitis^a,b, S. Bumelienė^a and J. Požela^a
^aSemiconductor Physics Institute, A. Goštauto 11, Vilnius, 01108, Lithuania
^bDepartment of Physics, Faculty of Fundamental Sciences, Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius 10223, Lithuania

Full Text PDF

Received: 22 08 2004;

Si and GaAs avalanche diodes containing microplasmas are investigated. Microwave field applied to the diode in addition to reverse dc bias results in considerable spread of noise spectrum and in the increase of noise power. The microplasma noise spectra cover very high (30 to 300 MHz) and ultrahigh (300 to 1000 MHz) frequency bands, while the effective noise temperature is about 10⁸ K.

DOI: 10.12693/APhysPolA.107.369
PACS numbers:05.40.Ca, 52.25.Gj, 72.70.+m, 85.30.-z