Spectroscopic Ellipsometry of Porphyrin Adsorbed in Porous Silicon |
G.-J. Babonasa, V. Snitkab, R. Rodaitėb, I. Šimkienėa, A. Rėzaa and M. Treiderisa
aSemiconductor Physics Institute, Goštauto 11, 01108 Vilnius, Lithuania bKaunas University of Technology, Studentų 65, 51369 Kaunas, Lithuania |
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Received: 22 08 2004; |
Aqueous solution of meso-tetra(4-sulfonatophenyl)porphine was deposited on electrochemically etched n-Si wafers. The morphology of the hybrid systems was investigated by scanning electron microscope and atomic force microscope techniques. The optical response of the hybrid systems was studied by spectroscopic ellipsometry in the range of 1-5 eV. Particular features in adsorption process were revealed for meso-tetra(4-sulfonatophenyl)porphine deposited on variously chemically treated Si substrates. It was found that porphyrin J-aggregates can be intercalated into large pores formed in a bulk n-Si as well as into nanopores of luminescent oxide layer. |
DOI: 10.12693/APhysPolA.107.319 PACS numbers:78.68.+m, 61.43.-j, 61.43.Gt |