High Power Microwave Detection in Asymmetrically Shaped n-AlxGa1-xAs Structures |
| S. Ašmontas, A. Čerškus, J. Gradauskas, J. Kundrotas, A. Lučun, V. Petkun, A. Sužiedėlis and A. Šilėnas
Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania |
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| Received: 22 08 2004; |
| Investigations of detection of high power microwaves in planar asymmetrically shaped microwave diodes on the basis of AlxGa1-xAs ternary semiconductors with various AlAs mole fraction are presented. The principle of operation of the microwave diodes is based on carrier heating phenomena in asymmetrically shaped homogeneous semiconductor structure due to different distribution of the electric field strength along the sample. Experimental results of microwave detection on the barrier-less asymmetrically shaped diodes are presented paying special attention to the homogeneity of AlxGa1-xAs which was monitored by photoluminescence technique. |
| DOI: 10.12693/APhysPolA.107.315 PACS numbers:07.57.Kp, 84.40.-x, 72.20.Ht |