Hot Phonons in a Biased Two-Dimensional InGaAs Channel |
| V. Aninkevičius, J. Liberis, A. Matulionis and I. Matulionienė
Semiconductor Physics Institute, A. Goštauto 11, Vilnius 01108, Lithuania |
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| Received: 22 08 2004; |
| Experimental dependence of microwave noise temperature on supplied electric power is used to estimate hot-phonon number in a modulation-doped In0.52Al0.48As/In0.53Ga0.47As/In0.7 Ga0.3As/In0.52Al0.48As two-dimensional electron gas channel (n2D=2.3×1012 cm-2). The nonequilibrium occupancy of the involved longitudinal optical phonon states exceeds the equilibrium one nearly twice at 2 kV/cm electric field. |
| DOI: 10.12693/APhysPolA.107.304 PACS numbers:63.20.Kr, 72.20.Ht |