Frequency Dependence of Shot Noise in Resonant Diodes under Coherent Tunneling

V.Ya. Aleshkina, L. Reggianib and M. Rosinia aInstitute for Physics of Microstructures, Nizhny Novgorod GSP-105 603600, Russia bNational Nanotechnology Laboratory of INFM, Dipartimento di Ingegneria dell' Innovazione, Università di Lecce, via Arnesano s/n, 73100 Lecce, Italy

Full Text PDF

Received: 22 08 2004;

The current spectral density and the Fano factor of a resonant diode are investigated as a function of frequency up to values just below the inverse of the transit time. We consider the case of coherent tunneling for a symmetric double barrier structure at voltages up to the first current peak at 77 K. At high frequencies the Fano factor is found to become suppressed systematically at a value of 0.25 independently of frequency. This suppression below 0.5 is an indication of coherent against sequential tunneling transport.

DOI: 10.12693/APhysPolA.107.298 PACS numbers:72.70.+m, 72.20.-i, 72.30.+q, 73.23.Ad