Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites

B. Vengalisa,b, A.M. Rosac, J. Devensona, K. Šliužienėa, V. Lisauskasa, A. Oginskisa, F. Anisimovasa and V. Pyragasa aSemiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania bVilnius Gediminas Technical University, Saulėtekio al. 11, 2040 Vilnius, Lithuania cDept. of Physics, University of Lisbon, Ed C8, 1749-016 Lisbon, Portugal

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Received: 22 08 2004;

High crystalline quality films of n-La2/3Ce1/3MnO3, p-La2/3Ca1/3MnO3 and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO3(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La2/3Ce1/3Mn O3/La2/3Ca1/3MnO3 bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.

DOI: 10.12693/APhysPolA.107.290 PACS numbers:73.40.Cg, 73.40.Lg, 75.50.Dd