Spin-Polarized Carrier Injection in MOCVD-Grown YBCO/STO/LSMO Heterostructures with Underlying YBCO Layer

B. Vengalisa, V. Plaušinaitienea,b, A. Abrutisb and Z. Šaltytėb aSemiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania bVilnius University, Dept. of General and Inorganic Chemistry, Naugarduko 24, 2006, Vilnius, Lithuania

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Received: 22 08 2004;

The oxide heterostructures composed of superconducting YBa2Cu3O7 bottom layer, the overlying ferromagnetic La1-xSrxMnO3 film and SrTiO3 as ultrathin (d≈5 nm) barrier were grown heteroepitaxially onto LaAlO 3 substrates by applying pulsed liquid injection metalorganic chemical vapour deposition technique. We report anomalous interface resistance increase with cooling just below superconductive transition temperature (Tc≅85 K) and enhanced suppression of supercurrent of strip-like YBa2Cu3O7 film due to spin-polarized carriers injected from the ferromagnetic manganite layer.

DOI: 10.12693/APhysPolA.107.286 PACS numbers:74.50.+r, 81.15.Gh, 85.25.-j