Optically Driven Domain Instability and High-Frequency Current Oscillations in Photoexcited GaAs under Nonuniform Electron Heating
L. Subačius and I. Kašalynas
Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
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Received: 22 08 2004;
Fast domain instabilities induced by light-interference pattern in dc-biased semi-insulating GaAs are investigated. Current oscillations in GHz-frequency range are observed due to nonuniform electron heating and domains formation in light-induced grating. Characteristic features of the oscillations under various experimental conditions are presented. Numerical calculations based on the hot-electron hydrodynamic model are used to explain the observed nonlinear features under various external bias and periods of the grating.
DOI: 10.12693/APhysPolA.107.275
PACS numbers:71.55.Eq, 72.20.Ht