Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures

V.Yu. Ivanova, M. Godlewskia, S. Miasojedovasb, S. Juršėnasb, K. Kazlauskasb, A. Žukauskasb, C. Skierbiszewskic, M. Siekaczc, M. Leszczyńskic, P. Perlinc, T. Suskic and I. Grzegoryc aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland bInstitute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, Building III, 10222 Vilnius, Lithuania cHigh Pressure Research Center, Polish Academy of Sciences, P.O. Box 65, 01-142 Warsaw, Poland

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Received: 22 08 2004;

We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.

DOI: 10.12693/APhysPolA.107.225 PACS numbers:78.55.Cr, 73.21.Fg, 72.20.Jv, 78.47.+p