Photoluminescence and Photoconductivity Dynamics in Semi-Insulating Epitaxial GaN Layers

E. Gaubas , S. Juršėnas, K. Kazlauskas, S. Miasojedovas, J. Vaitkus and A. Žukauskas Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 10, 10223 Vilnius, Lithuania

Full Text PDF

Received: 22 08 2004;

The transients of fast free-carrier recombination and of multi-trapping processes due to different species of defects have been investigated by photoluminescence and by contact and microwave photoconductivity. Three distinct stages of relaxation, namely, of stimulated emission, of recombination due to point defects and capture into trapping centers associated with dislocations, and a non-exponential stage with a stretched-exponent asymptotic decay ascribed to dislocations mediated multi-trapping were distinguished by correlated examination of time-resolved photoluminescence and photoconductivity transients.

DOI: 10.12693/APhysPolA.107.215 PACS numbers:61.72.Hh, 72.40.+w