ACTA

Magneto- and Electroresistance of Ultrathin Anisotropically Strained La-Sr-MnO Films

S. Balevičius^a, V. Stankevič^a, N. Žurauskienė^a, Č. Šimkevičius^a, J. Paršeliūnas^a, P. Cimmperman^a, A. Abrutis^b and V. Plaušinaitienė^b
^aSemiconductor Physics Institute, A. Goštauto 11, Vilnius, Lithuania
^bVilnius University, Dept. of General and Inorganic Chemistry, Naugarduko 24, Vilnius, Lithuania

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Received: 22 08 2004;

The magnetoresistance anisotropy of ultrathin La_0.83Sr_0.17Mn O₃ films deposited on NdGaO₃ substrate by metalorganic chemical vapour deposition technique was investigated. The electric-field-induced resistance change was studied up to electric fields of 10 kV/cm using ns duration electrical pulses. It was found that in ultrathin (< 10 nm) and thin (< 50 nm) films the origin of electric-field-induced resistance change is thermal. However, the films with thicknesses of about 20 nm, exhibit negative electric-field-induced resistance change, having a pure electronic nature. This effect is explained in terms of two-layer systems with imperfections located at the interface between the layers.

DOI: 10.12693/APhysPolA.107.203
PACS numbers:75.47.Gk, 75.30.Gw, 73.50.-h, 68.55.Jk