Monte Carlo Simulation of Dember Effect in n-InAs under Subpicosecond Laser Pulse Excitation |
| V.L. Malevich
Institute of Physics, National Academy of Sciences of Belarus, Kuprevich 1, bl. 2, 220141 Minsk, Republic of Belarus |
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| Received: 22 08 2004; |
| Monte Carlo method is used to simulate photo-Dember effect and generation of electromagnetic terahertz pulses in n-InAs excited by femtosecond laser radiation. Dynamics of electric field and transport of carriers were considered self-consistently. It is shown that, under excitation of semiconductor by laser pulses with photon energies<1.1 eV, the Dember photovoltage reaches a peak value (it can be in tens times larger than the typical Dember photo-electromotive force at stationary illumination) through 50-100 fs after excitation and then fades while oscillating with plasma frequency. Excitation of semiconductor by radiation with a greater photon energy (>1.1 eV) results in inter-valley transfer of photoelectrons and the photovoltage to decrease. |
| DOI: 10.12693/APhysPolA.107.169 PACS numbers:72.40.+w, 78.47.+p, 78.20.Bh |