Small and Large Signal Analysis of Terahertz Generation from InN n+nn+ Structures with Free-Carrier Grating
V. Gružinskis, P. Shiktorov and E. Starikov
Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
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Received: 22 08 2004;
Electron transport in long (up to 15μm) InN n+nn+ structures is theoretically investigated by the Monte Carlo particle technique at low lattice temperatures when optical phonon emission is the dominating scattering mechanism. It is shown that at constant bias a free-carrier grating can be formed inside the n-region. Such a grating is found to be responsible for microwave power generation in the THz frequency range. The generation mechanism is similar to that in submicron n+nn+ structures under quasiballistic transport conditions.
DOI: 10.12693/APhysPolA.107.163
PACS numbers:72.20.Ht, 72.30.+q