Light Absorption and Photoluminescence in Quantum Dots and Artificial Molecules

D.A. Firsova, L.E. Vorobjeva, V.Yu. Panevina, N.K. Fedosova, V.A. Shalygina, J.B. Samsonenkob, A.A. Tonkikhb, G.E. Cirlinb, A. Andreevc, N.V. Kryzhanovskayac, I.S. Tarasovc, N.A. Pikhtinc, V.M. Ustinovc, S. Hannad, A. Seilmeierd, F.H. Juliene, N.D. Zakharovf and P. Wernerf aSt. Petersburg State Polytechnic University, 195251 St. Petersburg, Russia bInstitute for Analytical Instrumentation RAS, 198103 St. Petersburg, Russia cIoffe Physico-Technical Institute, RAS, 194021 St. Petersburg, Russia dInstitute of Physics, University of Bayreuth, 95440 Bayreuth, Germany eInstitut d'Eléctronique Fondamentale, Université Paris-Sud, 91405 Orsay, France fMax Planck Institute of Microstructure Physics, 06120 Halle (Saale), Germany

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Received: 22 08 2004;

Intraband absorption in n- and p-doped structures with InAs/GaAs quantum dots covered by InGaAs layers is studied both experimentally and theoretically. The absorption cross-section for p-type quantum dots was found to be significantly smaller than that for n-type quantum dots. Interband absorption bleaching under strong interband excitation is found and investigated in undoped quantum dot structures. Structures with artificial molecules were grown. Photoluminescence spectra and transmission electron microscopy images proves the presence of coupled symmetrical quantum dots.

DOI: 10.12693/APhysPolA.107.158 PACS numbers:78.30.Fs