Low-Temperature MBE Grown GaAs for Pulsed THz Radiation Applications |
| R. Adomavičius, S. Balakauskas, K. Bertulis, A. Geižutis, G. Molis and A. Krotkus
Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania |
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| Received: 22 08 2004; |
| Attempts to optimize recombination characteristics of low-temperature MBE grown GaAs layers for their use in terahertz radiation devices are described and the characteristics of this material are compared with its alternative - As-ion implanted GaAs crystals. |
| DOI: 10.12693/APhysPolA.107.128 PACS numbers:42.65.Re, 07.57.Hm, 78.47.+p |