Parametric Generation of Middle and Far Infrared Radiation in GaAs-Based Semiconductor Lasers and Waveguides

V.Ya. Aleshkina, A.A. Afonenkob, A. Biryukovc, V.I.Gavrilenkoa, A.A. Dubinova, Vl.V. Kocharovskyd, S.V. Morozova, K.V. Maremynina, S.M. Nekorkinc, B.N. Zvonkovc and N.B. Zvonkovc aInstitute for Physics of Microstructures RAS, GSP-105, Nizhny Novgorod, 603950, Russia bByelorussian State University, 220050, Minsk, Byelorussia cPhysical-Technical Institute of Nizhny Novgorod State University, 23, Gagarina av., Nizhny Novgorod, 603950, Russia dInstitute of Applied Physics of RAS, 46, Ulyanova Str., Nizhny Novgorod, 603950, Russia

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Received: 22 08 2004;

A possibility of parametric generation of middle and far infrared radiation due to the lattice nonlinearity in semiconductor laser diode and waveguide is discussed. Three possible waveguide constructions for effective generation are considered. The parametric generation method is shown to provide generation power of the order of milliwatt for middle infrared radiation and of tens of microwatt for far infrared radiation using modern quantum well laser diodes.

DOI: 10.12693/APhysPolA.107.7 PACS numbers:42.55.Px, 42.65.-k