La0.7Sr0.3MnO3 Thin-Film Grain-Boundary Junctions on a Bi-Crystal Substrate |
| P. Gierłowskia, A. Szewczyka, A.V. Abal'osheva, E.S. Vlakhovb, T.I. Donchevc and B. Blagoevc
aInstitute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warszawa Poland bInstitute of Solid State Physics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria cInstitute of Electronics, Bulgarian Academy of Sciences, 1784 Sofia, Bulgaria |
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| Transport properties of 10μm to 30μm wide grain-boundary junctions ion-etched in thin colossal magnetoresistance La0.7Sr0.3MnO3 films deposited on a SrTiO3 bi-crystal were investigated. We have measured the current-voltage characteristics in the temperature range from 4.2 K to 300 K without applied magnetic field, as well as the magnetoresistance at magnetic fields up to±10 kOe directed parallel to the film surface, both perpendicular and parallel to the direction of current flow through the junctions. The investigated junctions have nonlinear current-voltage characteristics in this temperature range and consist of several magnetic domains. The maximum magnetoresistance (R(H)-R max)/Rmax, measured at 1 kOe was -17.6% at 4.1 K. |
| DOI: 10.12693/APhysPolA.106.715 PACS numbers: 75.47.Lx, 75.47.Gk, 72.25.Mk |