Metastability of Band-Gap Energy in GaInNAs Compound Investigated by Photoreflectance
R. Kudrawiec, J. Misiewicz
Institute of Physics, Wrocław University of Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland E.-M. Pavelescu, J. Konttinen and M. Pessa
Optoelectronics Research Center, Tampere University of Technology, P.P. Box 692, 33101 Tampere, Finland
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The band-gap energy of GaInNAs layers lattice-matched to GaAs substrate and annealed under different temperatures is investigated by photoreflectance spectroscopy. Different nitrogen nearest-neighbor environments of N atom appear in GaInNAs layers due to the post-growth annealing. It leads to an energy-fine structure of the band gap, i.e. well separated photoreflectance resonances related to different nitrogen nearest-neighbor environments (N-Ga4-mInm (0≤ m≤ 4) short-range-order clusters). The temperature dependence of the band gap E(T) related to different N-Ga4-mInm clusters is investigated in 10-280 K temperature range, and Varshni and Bose-Einstein parameters for E(T) are determined.
DOI: 10.12693/APhysPolA.106.249
PACS numbers: 73.22.-f, 78.66.-w, 78.30.-j