Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique
L. Gelczuk, M. Dąbrowska-Szata, G. Jóźwiak and D. Radziewicz
Faculty of Microsystem Electronics and Photonics, Wrocław University of Technology, Janiszewskiego 11/17, 50-372 Wrocław, Poland
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Two deep traps associated with lattice-mismatch induced defects in n-type In0.042Ga0.958As/GaAs heterostructures and three deep point traps were observed by means of DLTS method. In order to determine the overlapping DLTS-line peaks parameters precisely, high resolution Laplace DLTS studies werw performed. A simple procedure of distinguishing between point and extended defects in DLTS measurements was used.
DOI: 10.12693/APhysPolA.106.265
PACS numbers: 71.55.-i, 71.55.Eq, 71.20.N