(Eu,Gd)Te --- MBE Growth and Characterization
P. Dziawa, B. Taliashvili, W. Domuchowski, E. Łusakowska, M. Arciszewska, I. Demchenko, W. Dobrowolski, K. Dybko, O.M. Fedorych, A.J. Nadolny, V. Osinniy, A. Petrouchyk and T. Story
Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
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Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF2 (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 1020cm-3 and sharp maximum of resistivity at transition temperature.
DOI: 10.12693/APhysPolA.106.215
PACS numbers: 75.50.Pp, 81.15.Hi