Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
S. Miasojedovasa, S. Juršėnasa, G. Kurilčika, A. Žukauskasa, V.Yu. IvanovbM. Godlewskib,c, M. Leszczyńskid, P. Perlind and T. Suskid
aInstitute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, building III, 10222 Vilnius, Lithuania
bInstitute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland
cDept. Math. and Natural Sci. College of Science, Cardinal S. Wyszyński Univ., Warsaw, Poland
dHigh Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland
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We report on high-excitation luminescence spectroscopy in InxGa1-xN/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
DOI: 10.12693/APhysPolA.106.273
PACS numbers: 78.45.+h, 78.47.+p, 78.67.De