ACTA

Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates

S. Miasojedovas^a, S. Juršėnas^a, G. Kurilčik^a, A. Žukauskas^a, V.Yu. Ivanov^bM. Godlewski^b,c, M. Leszczyński^d, P. Perlin^d and T. Suski^d
^aInstitute of Materials Science and Applied Research, Vilnius University, Saulėtekio al. 9, building III, 10222 Vilnius, Lithuania
bInstitute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland
cDept. Math. and Natural Sci. College of Science, Cardinal S. Wyszyński Univ., Warsaw, Poland
dHigh Pressure Research Center, Polish Academy of Sciences, Warsaw, Poland

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We report on high-excitation luminescence spectroscopy in In_xGa_1-xN/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures

DOI: 10.12693/APhysPolA.106.273
PACS numbers: 78.45.+h, 78.47.+p, 78.67.De