| Monocrystalline and Polycrystalline ZnO and ZnMnO Films Grown by Atomic Layer Epitaxy --- Growth and Characterization |
| A. Wójcik a , K. Kopalko b , M. Godlewski a,b , E. Łusakowska b , W. Paszkowicz b , K. Dybko b , J. Domagała b , A. Szczerbakow b and E. Kamińska c a Dep. of Mathematics and Natural Sciences, College of Science Cardinal S. Wyszyński University, Warsaw, Poland b Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warsaw, Poland c Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland |
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| Recently we demonstrated growth of monocrystalline ZnO films by atomic layer epitaxy in the gas flow variant using inorganic precursors. In this study, we discuss properties of ZnO films grown with organic precursors. Successful Mn doping of the ZnO films during the growth was achieved using the Mn-thd complex. Secondary ion mass spectroscopy and X-ray investigations reveal the contents of Mn up to about 20% of the cationic component. |
| DOI: 10.12693/APhysPolA.105.667 PACS numbers: 68.55.Jk, 68.55.Ln, 68.55.Nq, 78.66.Hf, 81.15.Kk |