| Investigation of Photoelectric Properties of ZnSe:Cr and ZnTe:V:Al by Picosecond Four-Wave Mixing Technique |
| A. Kadys a , M. Sudzius a , K. Jarasiunas a , V. Ivanov b , M. Godlewski b,c and J.-C. Launay d a Department of Semiconductor Optoelectronics Institute of Materials Science and Applied Research, Vilnius University, Sauletekio ave. 9 bld. 3, 10222 Vilnius, Lithuania b Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warsaw, Poland c College of Science, Cardinal S. Wyszyński University, Warsaw, Poland d Institut de Chimie de la Matiere Condensee de Bordeaux (ICMCB) 33608, Pessac, France |
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| Role of deep impurity levels in carrier generation, transport, and recombination were investigated in bulk ZnSe:Cr and ZnTe:V:Al crystals by four-wave mixing technique. The temporal and exposure dependencies of optical nonlinearities in ZnSe:Cr evidenced an influence of Cr 1+ /Cr 2+ states in carrier generation, exhibited very fast carrier relaxation, and revealed the presence of competing recombination mechanisms. Similar investigations in ZnTe:V:Al showed an effective carrier generation from Al-induced defect complexes as well as very fast carrier capture by Zn-vacancies. |
| DOI: 10.12693/APhysPolA.105.651 PACS numbers: 73.50.Gr, 81.70.Fy, 61.72.Hh, 61.72.Ji |