MnAs Overlayer on GaN(0001)-(1x1) --- its Growth, Morphology and Electronic Structure

B.J. Kowalski a , I.A. Kowalik a , R.J. Iwanowski a , E. Łusakowska a , M. Sawicki a , J. Sadowski a,b , I. Grzegory c and S. Porowski c a Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warsaw, Poland b MAX Laboratory, Lund University, PO Box 118, 221 00 Lund, Sweden c High Pressure Research Center, Polish Academy of Sciences Sokolowska 29, 01-141 Warsaw, Poland

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MnAs layer has been grown by means of MBE on the GaN(0001)-(1x1) surface. Spontaneous formation of MnAs grains with a diameter of 30--60nm (as observed by atomic force microscopy) occurred for the layer thickness bigger than 7ML. Ferromagnetic properties of the layer with Curie temperature higher than 330K were detected by SQUID measurements. Electronic structure of the system was investigated in situ by resonant photoemission spectroscopy for MnAs layer thickness of 1, 2, and 8ML. Density of the valence band states of MnAs and its changes due to the increase in the layer thickness were revealed.

DOI: 10.12693/APhysPolA.105.645 PACS numbers: 68.55.--a, 73.20.At