Fabrication and Electrical Characterization of PbS--EuS Ferromagnetic Semiconductor Microstructures
S. Wrotek a , A. Morawski a , Z. Tkaczyk a , A. M±kosa a , T. Wosiński a , K. Dybko a , E. Łusakowska a , T. Story a , A.Yu. Sipatov b , B. Pecz c , K. Grasza a , A. Szczerbakow a and J. Wróbel a
a Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warszawa, Poland
b National Technical University KPI, 61002 Kharkov, Ukraine
c Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest 1525, Hungary
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Current--voltage characteristics and temperature dependence of differential conductance were studied in lithographically patterned (lateral dimensions from 10x10μm 2 to 100x100μm 2 ) ferromagnetic EuS--PbS--EuS microstructures. Below the ferromagnetic transition temperature a 4% decrease in the structure conductance was observed for mutual antiferromagnetic orientation of magnetization vectors of ferromagnetic EuS layers.
DOI: 10.12693/APhysPolA.105.615
PACS numbers: 73.61.Le, 75.30.Et, 75.70.Cn