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Fabrication and Electrical Characterization of PbS--EuS Ferromagnetic Semiconductor Microstructures |
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S. Wrotek
a
, A. Morawski
a
, Z. Tkaczyk
a
, A. M±kosa
a
, T. Wosiński
a
, K. Dybko
a
, E. Łusakowska
a
, T. Story
a
, A.Yu. Sipatov
b
, B. Pecz
c
, K. Grasza
a
, A. Szczerbakow
a
and J. Wróbel
a
a Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warszawa, Poland b National Technical University KPI, 61002 Kharkov, Ukraine c Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, Budapest 1525, Hungary |
| Full Text PDF |
| Current--voltage characteristics and temperature dependence of differential conductance were studied in lithographically patterned (lateral dimensions from 10x10μm 2 to 100x100μm 2 ) ferromagnetic EuS--PbS--EuS microstructures. Below the ferromagnetic transition temperature a 4% decrease in the structure conductance was observed for mutual antiferromagnetic orientation of magnetization vectors of ferromagnetic EuS layers. |
| PACS numbers: 73.61.Le, 75.30.Et, 75.70.Cn |