| Bychkov--Rashba Effect and g-Factor Tuning in Modulation Doped SiGe Quantum Wells |
| H. Malissa a , W. Jantsch a , M. Mühlberger a , F. Schäffler a , Z. Wilamowski b , M. Draxler c and P. Bauer c a Institut für Halbleiter- und Festkörperphysik, Johannes Kepler Universität 4040 Linz, Austria b Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warsaw, Poland c Institut für Experimentalphysik, Johannes Kepler Universität 4040 Linz, Austria |
| Full Text PDF |
| We investigate the spin resonance of electrons in one-sided modulation doped Si 1-x Ge x (x=0-10%)) quantum wells defined by Si 0.75 Ge 0.25 barriers. In such structures, the Bychkov--Rashba effect induces an effective magnetic field in the quantum well layer which causes anisotropy of both the g-factor and the spin coherence time. Evaluation of the Rashba coefficient as a function of x yields a monotonic increase. For x=5% the shift in the resonance field exceeds the ESR linewidth already, demonstrating the possibility to use this effect for g-factor tuning to select individual spins in an ensemble. |
| DOI: 10.12693/APhysPolA.105.585 PACS numbers: 73.21.Fg, 85.75.--d |