Spatially Resolved Micro-Luminescence from GaN/AlGaN Quantum Dots
B. Chwalisz, A. Wysmołek, R. Bożek, R. Stępniewski, K. Pakuła, P. Kossacki, A. Golnik and J.M. Baranowski
Institute of Experimental Physics, Warsaw University, Warsaw, Poland
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We report on the optical experiments performed on low density GaN/AlGaN quantum dots grown on sapphire substrate using SiN during the growth process. The existence of quantum dots in the investigated structures was confirmed by atomic force microscopy. Although macro-luminescence of the investigated structures consist of broad emission lines the micro-photoluminescence experiments performed with the spatial resolution of 0.25μm revealed sharp emission lines from the individual quantum dot in the energy range of 3.20--3.55eV. It is shown that the magnetic fields up to 7T do not influence significantly the electronic states of the dots.
DOI: 10.12693/APhysPolA.105.517
PACS numbers: 78.55.Cr, 78.66.Fd, 78.67.Hc, 75.75.+a, 68.65.Hb