Anisotropic Transport of Electrons in ZnS Thin-Film Electroluminescence Displays
Zheng Xu
Institute of Optoelectronic Technology Beijing Jiaotong University, Beijing 100044, China and Postdoctoral Working Station of Zhong-Huang San-Jin Ltd. District of Economy and Technology Development, Tianjin, China
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Received: November 18, 2003
We study the anisotropic electronic transport property of ZnS-type thin-film electroluminescence displays by Monte Carlo simulation. The simulation contains an accurate and efficient description of the anisotropic band structure and various scattering mechanisms like phonon scattering and impurity scattering. The electronic transport processes in three devices with different ZnS-layer orientations are simulated. From the obtained energy population and average energy of electrons, we conclude that the <100> direction is the best for electron acceleration under high electric field. We propose that new attempts in using this direction for ZnS-layer deposition will result in an improvement of the performance of thin-film electroluminescence displays.
DOI: 10.12693/APhysPolA.105.383
PACS numbers: 78.60.Fi