| Nonlinear Diffusion in Excited HgCdTe and Si Crystals |
| A.J. Janavicius a , Z. Norgela a and R. Purlys b a Department of Physics and Mathematics, Siauliai University, Visinskio 25, 5400, Siauliai, Lithuania b Faculty of Physics, Vilnius University, Sauletekio 9, 2040 Vilnius, Lithuania |
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| Received: July 11, 2003 |
| We discuss the properties of the nonlinear diffusion equation for the case of diffusion in excited systems. The diffusion coefficient is directly proportional to the concentration of impurities and depends on time in a special way. For the description of the excited systems, we used a special temperature function, which defined the time dependent diffusion coefficient and the Boltzmann distribution of the excited vacancies or impurity atoms in solids. This model was used for the approximation of indium concentration profiles in HgCdTe of a rapid diffusion component and very fast diffusion of metastable vacancies irradiated by soft X-rays in an excited Si crystal. |
| DOI: 10.12693/APhysPolA.104.459 PACS numbers: 66.30.--h, 66.30.Hs, 78.70.Ck |