| High-Temperature Scanning Tunnelling Spectroscopy of Transition Metal Oxides |
| Z. Klusek a,b , P.K. Datta a , P. Kowalczyk b , S. Pierzgalski b , A. Busiakiewicz b , W. Olejniczak b A. Basu c and A.W. Brinkman c a Advanced Materials Research Institute (AMRI), University of Northumbria Ellison Building, Ellison Place, Newcastle upon Tyne, NE1 8ST, UK b Department of Solid State Physics, University of £ód¼, Pomorska 149/153, 90-236 £ód¼, Poland c Department of Physics, University of Durham South Road, DH1 3LE Durham, UK |
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| In situ high-temperature scanning tunnelling spectroscopy measure- ments recorded on the heavily reduced TiO 2 (110) surface which contains Ti 2 O 3 regions showed disappearance of the energy gap accompanied by substantial decrease in amplitude of the band edge states with increasing temperature. It indicates smooth insulator--metal transition caused by bands overlap in Ti 2 O 3 , which takes place at elevated temperatures. In situ high-temperature scanning tunnelling microscopy and spectroscopy were used to study the influence of temperature on the electronic properties of Ni x Mn 3-x O 3-δ (0.4<=x<=1) thin films deposited by rf magnetron sputtering at three different oxygen/argon (2.5%, 10%, 15%) containing ambient. The morphology and distribution of the local density of states of the observed films did not show any difference for the films deposited at different conditions. The distribution of the local density of states was temperature dependent. The changes in the shape of the local density of states observed at 473K were reversible with temperature implying that no permanent change of the electronic structure occurred. |
| DOI: 10.12693/APhysPolA.104.245 PACS numbers: 71.30.+h, 73.20.At, 72.80.Ga |