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Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes -- In-Plane Instabilities of Light Emission |
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M. Godlewski
a,b
, V.Yu. Ivanov
a
, E.M. Goldys
c
, M. Phillips
d
, T. Böttcher
e
, S. Figge
e
, D. Hommel
e
, R. Czernecki
f
, P. Prystawko
f
, M. Leszczynski
f
, P. Perlin
f
, I. Grzegory
f
and S. Porowski
f
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland b College of Science, Cardinal S. Wyszyński University, Warsaw, Poland c Division of Information and Communication Sciences, Macquarie University, Sydney, Australia d Microstructural Analysis Unit, UTS, Sydney, Australia e Institute of Solid State Physics, University of Bremen, 28334 Bremen, Germany e f High Pressure Res. Center (Unipress), Polish Academy of Sciences Warsaw, Poland |
| Full Text PDF |
| Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission. |
| PACS numbers: 61.72.Ff, 61.72.Mm, 68.37.Hk, 78.60.Hk |