Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes -- In-Plane Instabilities of Light Emission
M. Godlewski a,b , V.Yu. Ivanov a , E.M. Goldys c , M. Phillips d , T. Böttcher e , S. Figge e , D. Hommel e , R. Czernecki f , P. Prystawko f , M. Leszczynski f , P. Perlin f , I. Grzegory f and S. Porowski f
a Institute of Physics, Polish Academy of Sciences, al. Lotników 32/46, 02-668 Warsaw, Poland
b College of Science, Cardinal S. Wyszyński University, Warsaw, Poland
c Division of Information and Communication Sciences, Macquarie University, Sydney, Australia
d Microstructural Analysis Unit, UTS, Sydney, Australia
e Institute of Solid State Physics, University of Bremen, 28334 Bremen, Germany e f High Pressure Res. Center (Unipress), Polish Academy of Sciences Warsaw, Poland
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Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
DOI: 10.12693/APhysPolA.103.689
PACS numbers: 61.72.Ff, 61.72.Mm, 68.37.Hk, 78.60.Hk