Magnesium Acceptor Energy Levels in Cubic GaN
H. Przybylińska, R. Buczko
Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warsaw, Poland
G. Kocher and W. Jantsch
Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Linz, Austria
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Intra-impurity transitions of the Mg acceptor in cubic phase GaN were measured with the use of photothermal ionization spectroscopy. Apart from the photoionization band several sharp features were detected, related to internal Mg--acceptor transitions. The transitions were identified with the help of effective-mass model calculations involving light- and heavy-hole as well as spin-orbit split-off bands. Transitions to resonant states, associated with the spin-orbit split-off valence band, were also identified. The determined hole binding energy of the Mg acceptor in zinc-blende GaN is 236±1 meV.
DOI: 10.12693/APhysPolA.103.683
PACS numbers: 78.30.--j, 71.55.--i, 71.55.Eq