Tuning of Spectral Sensitivity of AlGaN/GaN UV Detector
K.P. Korona, A. Drabińska, A. Trajnerowicz, R. Bożek, K. Pakuła and J.M. Baranowski
Institute of Experimental Physics, Warsaw University, Hoża 69, 00-681 Warsaw, Poland
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GaN/AlGaN photodetector that exhibits new interesting property is presented. Its spectral sensitivity depends upon bias voltage. Under positive or low negative bias the detector is sensitive mainly to the ultrafiolet radiation absorbed by AlGaN layer 3.7--3.8 eV. Under negative bias U B below -4 V, the detector is sensitive mainly to the radiation absorbed by GaN (3.4--3.6 eV). The effect can be explained based on numerical calculations of the electric field and potential profiles of this structure. The damping of GaN signal is attributed to activity of 2D electron gas formed on the GaN/AlGaN interface by spontaneous polarization. The reappearing of the signal is attributed to tunneling of holes through AlGaN, stimulated by a high electric field.
DOI: 10.12693/APhysPolA.103.675
PACS numbers: 73.40.Kp, 73.50.Pz, 78.40.Fy