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Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II--Mn--VI Semiconductors -- Mechanism of Lifetime Reduction |
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S. Yatsunenko
a
, A. Khachapuridze
a
, V.Yu. Ivanov
a
, M. Godlewski
a,b
, Le Van Khoi
a
, Z. Gołacki
a
, G. Karczewski
a
, E.M. Goldys
c
, M. Phillips
d
, P.J. Klar
e
and W. Heimbrodt
e
a Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland b College of Science, Cardinal S. Wyszyński University, Warsaw, Poland c Division of Information and Communication Sciences Macquarie Univ., Sydney, Australia d Microstructural Analysis Unit, UTS, Sydney, Australia e Dept. of Physics and Materials Sciences Center, Phillips-University of Marburg Renthof 5, 35032 Marburg, Germany |
| Full Text PDF |
| Based on the results of optically detected magnetic resonance and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn 2+ emission to spin dependent magnetic interactions between localized spins of Mn 2+ ions and spins/magnetic moments of free carriers. We show that this mechanism is active in both bulk and in low dimensional structures, such as quantum wells, quantum dots, and nanostructures. |
| PACS numbers: 71.55.Gs, 76.30.Fc, 76.70.Hb, 78.55.Et |