Spin Dependent Interactions of Free Carriers and Manganese Ions in Nanostructures of Wide Band Gap II--Mn--VI Semiconductors -- Mechanism of Lifetime Reduction
S. Yatsunenko a , A. Khachapuridze a , V.Yu. Ivanov a , M. Godlewski a,b , Le Van Khoi a , Z. Gołacki a , G. Karczewski a , E.M. Goldys c , M. Phillips d , P.J. Klar e and W. Heimbrodt e
a Institute of Physics, Polish Academy of Sciences, al. Lotnikow 32/46, 02-668 Warsaw, Poland
b College of Science, Cardinal S. Wyszyński University, Warsaw, Poland
c Division of Information and Communication Sciences Macquarie Univ., Sydney, Australia
d Microstructural Analysis Unit, UTS, Sydney, Australia
e Dept. of Physics and Materials Sciences Center, Phillips-University of Marburg Renthof 5, 35032 Marburg, Germany
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Based on the results of optically detected magnetic resonance and time-resolved investigations we relate the observed lifetime shortening of intra-shell Mn 2+ emission to spin dependent magnetic interactions between localized spins of Mn 2+ ions and spins/magnetic moments of free carriers. We show that this mechanism is active in both bulk and in low dimensional structures, such as quantum wells, quantum dots, and nanostructures.
DOI: 10.12693/APhysPolA.103.643
PACS numbers: 71.55.Gs, 76.30.Fc, 76.70.Hb, 78.55.Et