Magnetic Properties of GaMnAs Single Layers and GaInMnAs Superlattices Investigated at Low Temperature and High Magnetic Field
C. Hernandez a , F. Terki a , S. Charar a , J. Sadowski b,c,d , D. Maude e , V. Stanciu f and P. Svedlindh f
a Groupe d'Etude des Semiconducteurs CC074, Universite Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France
b Niels Bohr Institute, Copenhagen University, 2100 Copenhagen, Denmark
c Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warszawa, Poland
d MAX-Lab, Lund University, P.O. Box 118, 221 00 Lund, Sweden
e High Magnetic Field Laboratory, CNRS-MPI 25 Avenue des Martyrs, 38042 Grenoble, France
f Uppsala University, 751 20 Uppsala, Sweden
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Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (T c ~40 K), a new phase transition is observed close to 13 K.
DOI: 10.12693/APhysPolA.103.613
PACS numbers: 75.50.Pp, 75.70.--i