Magnetic Properties of GaMnAs Single Layers and GaInMnAs Superlattices Investigated at Low Temperature and High Magnetic Field

C. Hernandez a , F. Terki a , S. Charar a , J. Sadowski b,c,d , D. Maude e , V. Stanciu f and P. Svedlindh f a Groupe d'Etude des Semiconducteurs CC074, Universite Montpellier II, Place Eugene Bataillon, 34095 Montpellier Cedex 5, France b Niels Bohr Institute, Copenhagen University, 2100 Copenhagen, Denmark c Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warszawa, Poland d MAX-Lab, Lund University, P.O. Box 118, 221 00 Lund, Sweden e High Magnetic Field Laboratory, CNRS-MPI 25 Avenue des Martyrs, 38042 Grenoble, France f Uppsala University, 751 20 Uppsala, Sweden

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Magnetotransport properties of GaMnAs single layers and InGaMnAs/InGaAs superlattice structures were investigated at temperatures from 4 K to 300 K and magnetic fields up to 23 T to study the influence of carriers confinement through different structures. Both single layers and superlattice structures show paramagnetic-to-ferromagnetic phase transition. In GaMnAs/InGaAs superlattice beside the Curie temperature (T c ~40 K), a new phase transition is observed close to 13 K.

DOI: 10.12693/APhysPolA.103.613 PACS numbers: 75.50.Pp, 75.70.--i