Observation of Vacancies in Ga 1-x Mn x As with Positron Annihilation Spectroscopy
F. Tuomisto, J. Slotte, K. Saarinen
Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Finland
and J. Sadowski
Niels Bohr Institute fAFG, Oersted Laboratory, University of Copenhagen 2100 Copenhagen, Denmark Max-lab, Lund University, 22100 Lund, Sweden Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland
Full Text PDF
Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As 2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As 2 partial pressure.
DOI: 10.12693/APhysPolA.103.601
PACS numbers: 61.72.Ji, 75.50.Pp, 78.70.Bj