| Observation of Vacancies in Ga 1-x Mn x As with Positron Annihilation Spectroscopy |
| F. Tuomisto, J. Slotte, K. Saarinen Laboratory of Physics, Helsinki University of Technology, 02015 HUT, Finland and J. Sadowski Niels Bohr Institute fAFG, Oersted Laboratory, University of Copenhagen 2100 Copenhagen, Denmark Max-lab, Lund University, 22100 Lund, Sweden Institute of Physics, Polish Academy of Sciences, 02-668 Warszawa, Poland |
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| Positron annihilation spectroscopy can be used to determine the role of vacancy defects in semiconductors, by identification and quantification of the vacancies and their chemical surroundings. We have studied 0.5-0.8μm thick low temperature MBE GaMnAs layers with Mn content 0.5--5% and different As 2 partial pressures at growth. The Doppler broadening results show that the Ga vacancy concentration in the layers decreases with increasing Mn content and decreasing As 2 partial pressure. |
| DOI: 10.12693/APhysPolA.103.601 PACS numbers: 61.72.Ji, 75.50.Pp, 78.70.Bj |