Mn Impurity in GaN Studied by Electron Paramagnetic Resonance
A. Woło¶ a , M. Palczewska b , Z. Wilamowski c , M. Kamińska a , A. Twardowski a , M. Boækowski d , I. Grzegory d and S. Porowski d
a Institute of Experimental Physics, Warsaw University Hoża 69, 00-681 Warsaw, Poland
b Institute of Electronic Materials Technology Wólczyńska 133, 01-919 Warsaw, Poland
c Institute of Physics, Polish Academy of Sciences al. Lotników 32/46, 02-668 Warsaw, Poland
d High Pressure Research Center, Polish Academy of Sciences Sokołowska 29/37, 01-142 Warsaw, Poland
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We present the results of electron paramagnetic resonance investigations of GaN bulk crystals doped with Mn. The EPR experiment shows the Mn 2+ resonance in all the investigated n-type crystals, while in highly resistive samples extra doped with Mg acceptor the Mn 2+ resonance decreases. This is a consequence of the location of Mn acceptor level in GaN band gap. The analysis of the spin relaxation times reveals the Korringa scattering as the dominating spin relaxation mechanism in n-type GaN:Mn crystals. The effective exchange constant determined from spin relaxation rate temperature dependence is of the order of 14 meV.
DOI: 10.12693/APhysPolA.103.595
PACS numbers: 71.55.--i, 71.55.Eq, 71.70.Gm