Microwave-Induced Delocalization of Excitons in Ternary Compounds of II--VI and III--V Semiconductors
V.Yu. Ivanov a , M. Godlewski a,b , A. Khachapuridze a , S. Yatsunenko a , T. Wojtowicz a , G. Karczewski a , J.P. Bergman c , B. Monemar c , T. Shamirzaev d , K. Zhuravlev d , K. Leonardi e and D. Hommel e
a Institute of Physics, Polish Academy of Sciences al. Lotnikˇw 32/46, 02-668 Warsaw, Poland
b College of Science, Cardinal S. Wyszy˝ski University, Warsaw, Poland c Dept. of Physics and Meas. Techn., Link÷ping University 581 83 Link÷ping, Sweden
d Institute of Semiconductor Physics, SB RAN, Novosibirsk 630090, Russia
e Institute of Solid State Physics, Bremen University 28334 Bremen, Germany
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In this work we employ technique of optically detected cyclotron resonance for evaluation of the role of localization processes in CdTe/CdMnTe and CdMnTe/CdMgTe quantum well structures. From microwave-induced changes of excitonic emissions we evaluate magnitude of potential fluctuations (Stokes shift), correlate optically detected cyclotron resonance results with the results of time-resolved experiments and discuss nature of recombination processes in the limit of a strong localization.
DOI: 10.12693/APhysPolA.103.559
PACS numbers: 71.35.Ji, 72.25.Rb, 76.70.Hb, 78.55.Et